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IRF634B ; Transistor MOSFET N-Channel 250V 8.1A 74W 0.345Ω, TO-220

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Price:
Contact on 07707857302 or e-mail
Weight:
2.00 Grams


Product Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features :     ......      Download IRF634B.pdf

• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V

• Low gate charge ( typical  29 nC)

• Low Crss ( typical  20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability.

irf634b-diagram.jpg

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